SSM5H16TU 2014-03-01 1 silicon n channel mos type (u-mos )/silicon epitaxial sch ottky barrier diode SSM5H16TU dc-dc converter applications ? 1.8-v drive ? combined an n-ch mosfet and a schottky barrier diode in one package. ? low r ds (on) and low v f absolute maximum ratings mosfet (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 12 v dc i d 1.9 drain current pulse i dp 3.8 a p d (note 1) 0.5 drain power dissipation t = 10s 0.8 w channel temperature t ch 150 c schottky barrier diode (ta = 25c) characteristics symbol rating unit reverse voltage v r 30 v average forward current i o 0.8 a peak one cycle surge forward current i fsm 6 (50hz) a junction temperature t j 125 c mosfet and diode (ta = 25c) characteristics symbol rating unit storage temperature range t stg ? 55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm ufv jedec D jeita D toshiba 2-2r1a weight: 7 mg (typ.) 5 1 3 ke3 2 4 5 13 2 4 start of commercial production 2009-09
SSM5H16TU 2014-03-01 2 mosfet electrical character istics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = 1 ma, v gs = 0 v 30 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ?12 v 18 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 12 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 1.0 a (note 2) 2.0 3.9 ? s i d = 1.0 a, v gs = 4.0 v (note 2) ? 103 133 i d = 0.8 a, v gs = 2.5 v (note 2) ? 125 177 drain?source on-resistance r ds (on) i d = 0.5 a, v gs = 1.8 v (note 2) ? 165 296 m input capacitance c iss ? 123 ? output capacitance c oss ? 43 ? reverse transfer capacitance c rss v ds = 15v, v gs = 0 v, f = 1 mhz ? 18 ? pf total gate charge q g ? 1.9 ? gate-source charge q gs ? 1.1 ? gate-drain charge q gd v ds = 15v, i d = 1.9 a v gs = 4 v ? 0.8 ? nc turn-on time t on ? 9.2 ? switching time turn-off time t off v dd = 15 v, i d = 1.0 a, v gs = 0 to 2.5 v, r g = 4.7 ? 6.4 ? ns drain-source forward voltage v dsf i d = -1.9 a, v gs = 0 v (note 2) ? -0.83 -1.2 v note 2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) be sure to take this into consideration when using the device. (c) v out v dd = 15 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5v 0 v 90% 10% t off t r v dd v ds ( on )
SSM5H16TU 2014-03-01 3 schottky barrier diode electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v f (1) i f = 0.1 a ? 0.31 0.36 v f (2) i f = 0.2 a ? 0.35 0.4 v f (3) i f = 0.5 a ? 0.4 0.45 forward voltage v f (4) i f = 0.8 a ? 0.45 0.55 v reverse current i r v r = 30 v ? 5.3 50 a total capacitance c t v r = 0 v, f = 1 mhz ? 120 ? pf precaution the schottky barrier diode in this device has large reverse cu rrent leakage compared to typical switching diodes. thus, excessive operating temperature or voltage may cause thermal runaway. to avoid this problem, be sure to take both forward and reverse loss into consideration. handling precaution when handling individual devices (which are not yet mount ed on a circuit board), ensure that the environment is protected against static electricity. o perators should wear anti-static clothing, and containers and other objects that come into direct contact with devices s hould be made of anti-static materials. thermal resistance r th (j-a) and drain power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please take heat dissipation into consideration.
SSM5H16TU 2014-03-01 4 mosfet ambient temperature ta (c) ambient temperature ta (c) r ds (on) ? i d drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 3 0 0.2 0.4 0.6 2 v gs = 1.2 v 10 v 1 common source ta = 25 c 4.0 v 1.8 v v th ? ta gate threshold voltage v th (v) 1.0 0 ? 50 0 150 50 100 r ds (on) ? ta drain?source on-resistance r ds (on) (m ? ) drain?source on-resistance r ds (on) (m ? ) gate?source voltage v gs (v) r ds (on) ? v gs i d = 1.0a common source drain current i d (a) drain?source on-resistance r ds (on) (m ? ) common source ta = 25c 4 0.5 common source v ds = 3 v i d = 1 ma 0.8 1.0 2.5 v 1.5 v 0 4 0 400 200 12 ? 25 c ta = 100 c 25 c 300 100 8 2 6 10 v gs = 4.0 v 0 1 2 3 0 400 200 2.5 v 4 300 100 1.8 v 0 ? 50 0 50 150 200 100 400 i d = 0.5 a / v gs = 1.8 v 0.8 a / 2.5 v 300 100 1.0 a / 4.0 v common source gate?source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 2.0 ? 25 c ta = 100 c 25 c 1.0 common source v ds = 3 v
SSM5H16TU 2014-03-01 5 mosfet drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 10 1 0.1 1 3 0.3 0.01 drain?source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 10 100 30 50 3 5 common source ta = 25c f = 1 mhz v gs = 0 v drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 t f t on t r common source v dd = 15 v v gs = 0 to 2.5 v ta = 25 c r g = 4.7 drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 ?0.5 ?1.0 ? 25 c ta =100 c 25 c ?1.5 common source v gs = 0 v g d s i dr t off 10 c iss c oss c rss 500 300 1000 common source v ds = 3 v ta = 25c total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 2 4 8 10 6 2 v dd = 24 v 4 1 3 common source i d = 1.9 a ta = 25c v dd = 15 v
SSM5H16TU 2014-03-01 6 schottky barrier diode instantaneous forward current i f (ma) instantaneous forward voltage v f (v) i f ? v f 1000 0 1 10 0.01 0.1 ta=100 c 0.6 0.1 0.3 0.2 0.5 0.4 0.7 75 c 100 50 c 25 c 0 c -25 c 0.1 0.001 25 20 0.01 30 1 15 10 5 0 reverse current i r (ma) reverse voltage v r (v) i r ? v r 25 c 50 c ta=75 c c t ? v r capacitance c t (pf) 1 0 5 10 15 20 25 30 10 100 1000 reverse voltage v r (v) f = 1 mhz ta = 25c
SSM5H16TU 2014-03-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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